Thin film deposition method

ABSTRACT

A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No. 10-2018-0108523, filed on Sep. 11, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a thin film deposition method, and more particularly, to a method of depositing a thin film on a pattern structure using plasma enhanced atomic layer deposition (PEALD).

2. Description of the Related Art

Plasma enhanced atomic layer deposition (PEALD) has the advantage of depositing a thin film, which may be deposited at a high temperature in existing thermal atomic layer deposition at a low temperature. This advantage may be achieved by sequentially introducing a reactive gas or a source gas at a time difference, activating and ionizing at least one of the gases by plasma.

In a PEALD process, RF power is typically coupled to an upper electrode, e.g., a showerhead, located at the top of a reactor to generate plasma in a reaction space. However, when a thin film is deposited on a pattern structure (e.g., a pattern structure having a trench) on a substrate by using plasma, characteristics of a thin film deposited on the pattern top directly exposed to plasma and a thin film deposited on a trench wall and the bottom of the trench that are less exposed to plasma are not uniform.

SUMMARY

One or more embodiments include a method of forming a uniform thin film on a pattern structure having a trench or a recess.

One or more embodiments include a method of depositing a thin film of uniform film quality on a side wall portion and a bottom portion of a step of a pattern structure and improving conformality of a wet etch rate (WER) during a subsequent wet etching process.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a thin film deposition method with respect to a substrate includes forming an electric potential on an exposed surface of the substrate exposed to a reaction space by supplying RF power through a component disposed below the substrate; moving active species in the reaction space to the exposed surface of the substrate by using the electric potential; and forming a thin film including components of the active species on the exposed surface of the substrate by a movement of the active species.

The thin film deposition method may further include increasing a density of the active species in the reaction space.

The thin film deposition method may further include reducing a mobility of the active species in the reaction space.

The exposed surface of the substrate may include an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and wherein the active species move at least toward the side surface of the exposed surface of the substrate.

The thin film deposition method may further include increasing a density of the thin film by increasing a magnitude of the RF power.

The component may be a heater, and an RF electrode is inserted into the heater.

During the forming of the electric potential, the substrate may be disposed on a substrate support unit, a first part of the substrate in contact with the substrate support unit may be positively charged, and a second part of the substrate opposite the first part may be negatively charged. In this case, an attractive force may be generated between the second part of the substrate and the active species.

The active species may be generated from a material provided by a gas supply unit disposed on the substrate, and the gas supply unit may be grounded while the RF power is supplied through the component disposed below the substrate.

By supplying the RF power, a first plasma self-bias voltage may be generated on the substrate and a second plasma self-bias voltage may be generated on the gas supply unit at the same time, and the first self-bias voltage may be greater than the second self-bias voltage.

The exposed surface of the substrate may be negatively charged by the first plasma self-bias voltage.

A bias toward the substrate may be generated by supplying the RF power, and the active species may move toward the substrate at a predetermined speed by the bias.

The thin film deposition method may further include reducing a magnitude of the bias.

By adjusting the magnitude of the bias, the speed of active species may contribute to a deposition on the substrate.

The thin film deposition method may further include a first operation of supplying a first material; and a second operation of supplying a second material different from the first material, wherein the active species is formed from the second material, and wherein the thin film is formed by a reaction of the first material with the active species.

The thin film deposition method may further include performing a purging operation at least between the first operation and the second operation.

The thin film deposition method may further include performing isotropic etching on the thin film.

According to one or more embodiments, a thin film deposition method on a substrate includes providing a pattern structure having an upper surface and a lower surface and a side surface connecting the upper surface and the lower surface; chemisorbing a first material on the pattern structure by supplying the first material into a reaction space; purging the first material; supplying a second material into the reaction space; forming an electric potential on the top surface, the bottom surface, and the side exposed to the reaction space by supplying RF power through a component disposed below the substrate; and moving active species of the second material toward at least the side surface, wherein a thin film is formed on a substrate by reacting the first material and the active species.

According to one or more embodiments, a thin film deposition method on a substrate includes disposing a substrate on a component below a gas supply unit; and forming a thin film on the substrate by supplying at least one material through the gas supply unit; wherein, when forming the thin film, the gas supply unit is grounded and RF power is supplied through the component disposed below the substrate.

The thin film deposition method may further include, when supplying the at least one material, performing at least one of the following operations: increasing a density of active species of the material in a reaction space; reducing a mobility of the active species of the material in the reaction space; and reducing a magnitude of a bias formed by RF power.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings in which:

FIG. 1 schematically shows a thin film deposition apparatus according to embodiments of the present disclosure;

FIG. 2 schematically shows a thin film deposition apparatus according to embodiments of the present disclosure;

FIG. 3 shows a change in Vdc when RF power is applied to an upper electrode and when RF power is applied to a lower electrode;

FIG. 4 schematically shows active species being accelerated toward a trench structure on a substrate when RF power is supplied to a pattern structure according to the present disclosure;

FIG. 5 schematically shows a thin film deposition method according to embodiments of the present disclosure;

FIG. 6 is a schematic view for explaining a problem that occurs in an atomic layer deposition process according to the related art;

FIG. 7 shows an etching resistance of a SiO₂ thin film deposited when RF power is supplied through a lower electrode using a plasma enhanced atomic layer deposition (PEALD) method according to embodiments of the present disclosure;

FIG. 8 schematically shows a thin film deposition method according to embodiments of the present disclosure;

FIG. 9 schematically shows a thin film deposition method according to embodiments of the present disclosure; and

FIGS. 10 through 13 show a substrate support unit according to embodiments of the present disclosure in more detail.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

The embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art, the following embodiments may be modified into various other forms, and the scope of the present disclosure is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the disclosure to those of ordinary skill in the art.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the present disclosure. As used herein, the singular forms “a”, “an”, and “the” may include plural forms unless the context clearly indicates otherwise. Also, when used in this specification, the terms “include (comprise)” and/or “including (comprising)” specify the presence of the stated shapes, numbers, steps, operations, members, elements, and/or groups thereof and do not preclude the presence or addition of one or more other shapes, numbers, operations, members, elements, and/or groups thereof. As used herein, the term “and/or” may include any and all combinations of one or more of the associated listed items.

Although terms such as “first” and “second” are used herein to describe various members, regions, and/or portions, these members, components, regions, layers, and/or portions are not limited by these terms. These terms are not intended to mean particular orders, priorities, or superiorities, and are used only to distinguish one member, region, or portion from another member, region, or portion. Thus, a first member, region, or portion to be described below may refer to a second member, region, or portion without departing from the teachings of the present disclosure.

In the present disclosure, “gas” may include evaporated solids and/or liquids and may include a single gas or a mixture of gases. In the present disclosure, the process gas introduced into a reaction chamber through a gas supply unit may include a precursor gas and an additive gas. The precursor gas and the additive gas may typically be introduced as a mixed gas or may be separately introduced into a reaction space. The precursor gas may be introduced together with a carrier gas such as an inert gas. The additive gas may include a dilution gas such as a reactant gas and an inert gas. The reactant gas and the dilution gas may be mixedly or separately introduced into the reaction space. The precursor may include two or more precursors, and the reactant gas may include two or more reactant gases. The precursor may be a gas that is chemisorbed onto a substrate and typically contains metalloid or metal elements constituting a main structure of a matrix of a dielectric film, and the reactant gas for deposition may be a gas that reacts with the precursor chemisorbed onto the substrate when excited to fix an atomic layer or a monolayer on the substrate. The term “chemisorption” may refer to chemical saturation adsorption. A gas other than the process gas, that is, a gas introduced without passing through the gas supply unit, may be used to seal the reaction space, and it may include a seal gas such as an inert gas. In some embodiments, the term “film” may refer to a layer that extends continuously in a direction perpendicular to a thickness direction without substantially having pinholes to cover an entire target or a relevant surface, or may refer to a layer that simply covers a target or a relevant surface. In some embodiments, the term “layer” may refer to a structure, or a synonym of a film, or a non-film structure having any thickness formed on a surface. The film or layer may include a discrete single film or layer or multiple films or layers having some characteristics, and the boundary between adjacent films or layers may be clear or unclear and may be set based on physical, chemical, and/or some other characteristics, formation processes or sequences, and/or functions or purposes of the adjacent films or layers.

In the present disclosure, the expression “same material” should be interpreted as meaning that main components (constituents) are the same. For example, when a first layer and a second layer are both silicon nitride layers and are formed of the same material, the first layer may be selected from the group consisting of Si₂N, SiN, Si₃N₄, and Si₂N₃ and the second layer may also be selected from the above group but a particular film quality thereof may be different from that of the first layer.

Additionally, in the present disclosure, according as an operable range may be determined based on a regular job, any two variables may constitute an operable range of the variable and any indicated range may include or exclude end points. Additionally, the values of any indicated variables may refer to exact values or approximate values (regardless of whether they are indicated as “about”), may include equivalents, and may refer to an average value, a median value, a representative value, a majority value, or the like.

In the present disclosure where conditions and/or structures are not specified, those of ordinary skill in the art may easily provide these conditions and/or structures as a matter of customary experiment in the light of the present disclosure. In all described embodiments, any component used in an embodiment may be replaced with any equivalent component thereof, including those explicitly, necessarily, or essentially described herein, for intended purposes, and in addition, the present disclosure may be similarly applied to devices and methods.

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In the drawings, variations from the illustrated shapes may be expected as a result of, for example, manufacturing techniques and/or tolerances. Thus, the embodiments of the present disclosure should not be construed as being limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing processes.

FIG. 1 schematically shows a thin film deposition apparatus according to embodiments of the present disclosure. As an example of the thin film deposition apparatus described in the present specification, there may be a deposition apparatus of a semiconductor or a display substrate, but the present disclosure is not limited thereto. The thin film deposition apparatus may be any apparatus necessary for performing deposition of a material for forming a thin film.

Referring to FIG. 1, the thin film deposition apparatus may include a partition wall 110, a gas supply unit 120, a substrate support unit 130, and an exhaust passage 140.

The partition wall 110 may be a component of a reactor in the thin film deposition apparatus. In other words, a reaction space for the deposition on a substrate may be formed by a structure of the partition wall 110. For example, the partition wall 110 may include a reactor sidewall and/or a reactor top wall. The reactor top wall in the partition wall 110 may provide a gas supply channel 150 through which a source gas, a purge gas, and/or a reactive gas may be supplied.

The gas supply unit 120 may be disposed on the substrate support unit 130. The gas supply unit 120 may be connected to the gas supply channel 150. The gas supply unit 120 may be fixed to the reactor. For example, the gas supply unit 120 may be fixed to the partition wall 110 via a fixing member (not shown). The gas supply unit 120 may be configured to supply gas to an object to be processed in a reaction space 160. For example, the gas supply unit 120 may be a showerhead assembly.

A gas flow channel 170 communicating with the gas supply channel 150 may be formed in the gas supply unit 120. The gas flow channel 170 may be formed between a gas channel 125 (an upper portion) of the gas supply unit 120 and a gas supply plate 127 (a lower portion) of the gas supply unit 120. Although the gas channel 125 and the gas supply plate 127 are shown as separate structures in the drawings, the gas channel 125 and the gas supply plate 127 may be formed in an integrated structure.

The substrate support unit 130 may be configured to provide a space for the substrate to be accommodated and to contact a lower surface of the partition wall 110. The substrate support unit 130 may be supported by a body 200. The body 200 may move up and down and rotate. The reaction space 160 may be opened or closed by moving the substrate support unit 130 away from the partition wall 110 or contacting the partition wall 110 by the up and down movement of the body 200.

The substrate support unit 130 may further include a heater 310 and an RF electrode 320.

The heater 310 may be formed to penetrate at least a part of the substrate support unit 130. The heater 310 may be disposed below (i.e., inside the substrate support unit 130) the substrate that is accommodated on the substrate support unit 130. The temperature of the substrate placed on the substrate support unit 130 and/or the temperature of the reaction space may increase by heating the heater 310. The heater 310 may have a shape of a plate (for example, a circular plate) formed to correspond to a shape of the substrate or may have a shape of a rod disposed to be symmetrical with respect to the substrate.

The RF electrode 320 may penetrate at least a part of the substrate support unit 130. The RF electrode 320 may be disposed below (i.e., inside the substrate support unit 130) the substrate that is accommodated on the substrate support unit 130. RF power may be delivered to the reaction space 160 through the RF electrode 320, and accordingly, plasma may be generated in the reaction space 160.

The RF electrode 320 may be disposed between the substrate to be processed and the heater 310. That is, the RF electrode 320 may be disposed on the heater 310 such that the RF power may be transmitted to the substrate without being blocked by the heater 310. An insulating material may be disposed between the heater 310 and the RF electrode 320. In an alternative embodiment, the insulating material may include aluminum nitride. In another alternative embodiment, the insulating material may be a low dielectric constant material such as air. That is, an air gap may be formed between the heater 310 and the RF electrode 320.

The RF electrode 320 may have a shape corresponding to the shape of the substrate. For example, when the substrate has a disk shape, the RF electrode 320 may be formed to have the disk shape. In another example, the RF electrode 320 may have the shape of a rod disposed to be symmetrical with respect to the substrate. In an alternative embodiment, a metal portion connected to the ground may be additionally disposed between the RF electrode 320 and the heater 310. The metal portion may have a shape corresponding to the shape of the RF electrode 320 and/or the shape of the heater 310.

By the RF power supplied by the RF electrode 320, an electric potential (e.g., a negative potential) may be formed on the substrate exposed to the reaction space. For example, the substrate support unit 130 may be connected to a plasma generation unit (not shown), and RF power generated by the plasma generation unit may be delivered to the substrate within the reaction space by the RF electrode 320, and as a result, plasma may be generated in the reaction space.

More specifically, by the RF power supply, a first plasma self-bias voltage may be generated on the substrate, and a second plasma self-bias voltage may be generated on the gas supply unit 120. In this case, since the substrate support unit 130 below the substrate is connected to an RF generator (not shown, see FIG. 2) while the gas supplying unit 120 is connected to the ground, the first plasma self-bias voltage may be greater than the second plasma self-bias voltage. Thus, an exposed surface of the substrate may be negatively charged by the first plasma self-bias voltage.

By the formation of the plasma, a sheath potential may be formed on a part of the substrate exposed to the reaction space. Such sheath potential may generally cause sputtering. The related art uses a reactive ion etching (RIE) process or a physical vapor deposition (PVD) process for depositing using such a sputtering phenomenon. On the other hand, it is noted that the present disclosure is distinguished from the related art in that a thin film including an active species component is directly deposited on the substrate using an active species whose mobility is reduced, instead of reducing sputtering by the sheath potential.

Referring back to FIG. 1, the body 200, which is a component of the substrate support unit 130, below the substrate support unit 130 may include a first rod 410, a second rod 420, and an RF shield 430. The heater 310 may be connected to the first rod 410. The RF electrode 320 may be connected to the second rod 420. At least a part of the RF shield 430 may be disposed between the first rod 410 and the second rod 420. More specifically, the RF shield 430 may be spaced apart from the second rod 420 and disposed to surround the second rod 420. The RF shield 430 may also extend in an extension direction of the second rod 420.

The RF shield 430 may block the influence between a first signal transmitted to the heater 310 through the first rod 410 and a second signal transmitted to the RF electrode 320 through the second rod 420. To this end, the RF shield 430 may be connected to, for example, the ground. In another alternative embodiment, a first insulating member 440 may be disposed between the second rod 420 and the RF shield 430. The first insulating member 440 may have an annular shape and may include a through hole through which the second rod 420 passes. A relative position relationship between the second rod 420 and the RF shield 430 may be fixed by the first insulating member 440.

Although not shown in the drawings, the thin film deposition apparatus may further include a power supply unit configured to supply power to the heater 310. The power supply unit may be connected to the first rod 410. In an alternative embodiment, a first low pass filter may be disposed between the first rod 410 and the power supply unit (not shown) (see FIG. 9). Further, in an additional embodiment, the film deposition apparatus may further include a thermocouple and a temperature control unit. The thermocouple may be connected to the heater 310 and configured to generate an electrical signal in response to a temperature change of the heater 310. The generated electric signal may be transmitted to the temperature control unit. The temperature control unit may be configured to control the electric power supply unit based on the electric signal. In an alternative embodiment, a second low pass filter electrically connected to the thermocouple may be further disposed. The first and second low pass filters may block an RF power signal used in applying plasma from affecting the power supply unit and the temperature control unit. The above-described configurations will be described later in more detail with reference to FIG. 9.

Also, although not shown in the drawings, the substrate support unit 130 may further include a socket and a ground bracket. The second rod 420 and the plasma generation unit (not shown) may be connected through the socket. Also, the RF shield 430 and the ground may be connected through the ground bracket. A second insulating member may be disposed between the socket and the ground bracket, and electrical connection between the socket and the ground bracket may be prevented through the second insulating member. Further, the socket and the ground bracket may be mechanically fixed through the second insulating member.

Furthermore, a fixing unit may be included in the body 200 of the substrate support unit 130 such that a position of the RF shield 430 may be fixed. The body 200 may be disposed to surround the fixing unit and to support the fixing unit. Therefore, the position of the RF shield 430 may be fixed by the body 200 and the fixing unit. In an alternative embodiment, the body 200 may be spaced apart from the RF shield 430 and the ground bracket. The configuration of the socket, the ground bracket, and the fixing unit will be described later in more detail with reference to FIG. 10.

FIG. 2 schematically shows a thin film deposition apparatus according to embodiments of the present disclosure. The thin film deposition apparatus according to the embodiments may be a modification of the thin film deposition apparatus according to the above-described embodiments. Hereinafter, redundant descriptions of the embodiments will be omitted.

In the substrate support unit of FIG. 1, the RF electrode may be formed to surround the heater, while the RF electrode 320 of FIG. 2 may be formed to be inserted into the substrate support unit 130. In FIG. 1, a reaction space may be formed by face sealing of the partition wall 110 and the substrate support unit 130, while in FIG. 2, a reaction space may be formed by a first cover 240 and a second cover 250. However, it is noted that the present disclosure is not limited to these shapes and various modifications other than those shown in FIGS. 1 and 2 may be possible.

Referring to FIG. 2, the thin film deposition apparatus may include the first cover 240 providing the partition wall 110 and an exhaust passage 140, the second cover 250 providing the gas supply unit 120, and the substrate support unit 130. A bottom of the reaction space 160 may be formed by the substrate support unit 130, a top of the reaction space 160 may be formed by the second cover 250, and both sides of the reaction space 160 may be formed by the first cover 240.

An exhaust structure of a substrate processing apparatus may be configured as a downstream exhaust structure. At this time, the downstream exhaust structure may be implemented by the first cover 240. In this case, a gas used for deposition may be supplied to a substrate to be processed through a showerhead of the second cover 250 and then exhausted downstream through the exhaust passage 140 of the first cover 240.

As described above, in the present embodiment, the RF electrode 320 may be inserted into the substrate support unit 130. Further, a heater (not shown) may also be inserted into the substrate support unit 130. An insulating material may be disposed between the heater and the RF electrode 320 to prevent electrical connection between the RF electrode 320 and the heater.

The thin film deposition apparatus may further include a plasma supplier P and a ground G. The plasma supplier P may include an RF generator RG and a matcher MC.

The RF generator RG may output a signal of a frequency suitable for controlling energy of an active species and/or ions applied to the substrate in a reaction space. The signal may have, for example, a high frequency of 13.56 MHz, and preferably a very high frequency (VHF) band of 30 MHz or more, more preferably of 60 MHz or more.

The matcher MC may include a matching circuit for matching between the impedance of the RF generator RG and the impedance on the side of the load (for example, an electrode, a reaction space, etc.). In addition to the matching circuit, the matcher MC may include at least one of an RF sensor for measuring the load impedance, a controller for variably adjusting a value (an impedance position) of a variable reactance device in the matching circuit, a step motor, and a cooling fan. In another example, the matcher MC may further include a blocking capacitor for generating a magnetic bias.

As shown in FIG. 2, in the present disclosure, RF power may be supplied through a lower electrode instead of an upper electrode, for example, a showerhead. For example, the RF electrode 320 may be inserted into the substrate support unit 130 or a heater block to supply RF power from the bottom of a reactor into a reaction space. By exciting a reactive gas by the RF power, plasma may be generated in the reaction space, specifically on the substrate. In other words, by supplying RF power through the substrate support unit (or the heater block) below the reactor, radicals in the reaction space may be accelerated toward the bottom (i.e., the substrate) rather than the top of the reactor (i.e. the gas supply unit 120).

FIG. 3 shows a change in Vdc when RF power is applied to an upper electrode UE (a left side) and when RF power is applied to a lower electrode LE (a right side). Vdc in FIG. 3 may be a plasma self-bias voltage and determine the directionality of ions and radicals. In other words, ions and radicals may be accelerated and move along with a larger Vdc.

First, when RF power is supplied through the upper electrode UE, that is, a configuration (for example, a gas supply unit) opposite to a part on which a substrate is placed, since Vdc in the upper electrode UE such as the gas supply unit (e.g. a showerhead assembly) is higher than Vdc in the lower electrode LE such as a substrate support unit, ions and radicals may be accelerated in a direction opposite to a direction toward the substrate. A usual plasma deposition process may be performed using ions and/or radicals that move as described above.

On the other hand, according to the technical idea of the present disclosure, RF power may be supplied through the lower electrode LE, that is, a component (for example, a heater) below the substrate support unit on which the substrate is placed. In this case, Vdc in the lower electrode LE such as the substrate support unit may be higher than Vdc in the upper electrode UE such as the gas supply unit, and thus ions and radicals may be accelerated toward the substrate. Active species accelerated toward the substrate may collide with the substrate to cause etching of a substrate surface material rather than deposition. Thus, the mobility of the active species may be adjusted or reduced such that the active species accelerated toward the substrate may contribute to deposition on the substrate rather than etching.

As an example of reducing the mobility of the active species, very high frequency (VHF) RF power may be supplied through the lower electrode LE in the present disclosure. The VHF may have a frequency of more than 30 MHz and a frequency of 100 MHz. Since Vdc of the VHF is low, energy accelerated by a plasma sheath may be small. Therefore, acceleration by sheath may more contribute to deposition than the damage of a thin film, and accordingly, the density of the thin film may increase.

In alternative embodiments, a more amount of active species may be produced such that the active species accelerated toward the substrate may contribute to deposition on the substrate rather than etching. For example, by supplying VHF RF power through the lower electrode LE, more active species may be generated in a reaction space. Furthermore, it may contribute to the formation of the thin film by accelerating more active species toward the substrate.

In another alternative embodiment, moving energy and/or acceleration energy of the active species may be reduced such that the active species accelerated toward the substrate may contribute to deposition on the substrate rather than etching. For example, by decreasing the plasma self-bias voltage Vdc generated during plasma application, the speed and/or acceleration of the active species may be reduced.

As described above, the present disclosure may introduce at least one configuration among a configuration for increasing the number of active species in the reaction space, a configuration for reducing the mobility of the active species in the reaction space, and a configuration for reducing the size of a bias formed by RF power, while applying a lower electrode LE RF application configuration used in sputtering and/or etching of the related art to a plasma enhanced atomic layer process. This may improve the conformality of a thin film deposited on trenches of a pattern structure of a complex structure. Thus, a high density plasma ALD process that may minimize damage to a material on a substrate may be implemented.

FIG. 4 schematically shows active species being accelerated toward a trench structure on a substrate when RF power is supplied to a pattern structure according to the present disclosure. In FIG. 4, nitrogen is used as a reactive gas, but it is noted that the technical idea of the present disclosure is not limited thereto. For example, the technical idea of the present disclosure may be applied to the deposition of oxides, or other multi-component thin films, in addition to nitride.

Referring to FIG. 4, to form plasma in a reaction space, RF power may be applied through the RF electrode 320 included in the substrate support unit 130, and the RF electrode 320 may be negatively charged by the application of RF power. Accordingly, a surface (a metal surface or a non-metal surface) of the substrate support unit 130 may also be negatively charged. In this case, a first portion S1 of a substrate S in contact with the substrate support unit 130 may be positively charged. On the other hand, a second portion S2 of the substrate S opposite to the first portion S1 may be negatively charged.

The second portion S2 may be a portion exposed to a reaction space, and a pattern structure with a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface may be formed in the second portion S2. Attractive force may occur between the negatively charged second portion S2 and positively charged active species, and accordingly, the active species may move toward top, bottom, and sides of the pattern structure.

As described above, according to the embodiments of the technical idea of the present disclosure, a deposition process may be performed using not only the movement/acceleration of the active species by the plasma sheath but also the attraction force between the surface (especially the side surface and the bottom surface) of the pattern structure through charging of the pattern structure and active species. Thus, a high-quality thin film may be deposited on the side surface and the bottom surface of a structure including a trench or a recess having a high aspect ratio.

FIG. 5 schematically shows a thin film deposition method according to embodiments of the present disclosure. The thin film deposition method according to the embodiments may be performed using a thin film deposition apparatus according to the above-described embodiments. Hereinafter, redundant descriptions of the embodiments will be omitted.

Referring to FIG. 5, to perform thin film deposition on a substrate, a potential (e.g., a negative potential) may be first formed on an exposed surface of a substrate disposed in a reaction space (0510). To this end, RF power may be supplied through components (e.g., a substrate support unit, a susceptor, and/or a heater) disposed below the substrate. By supplying the RF power, a sheath potential may be formed on the exposed surface of the substrate.

For example, when the component is a heater, an RF electrode may be inserted into the heater. As another example, the component may be a substrate support unit, and the heater and the RF electrode may be inserted into the substrate support unit. As another example, the component may be a metal susceptor, and the heater may be inserted into the metal susceptor.

In an alternative embodiment, the active species may be generated from a material provided by a gas supply unit disposed on the substrate before RF power is supplied. Also, while RF power is being supplied, the substrate support unit may be connected to an RF generator, and the gas supply unit may be grounded.

Thereafter, the potential may be used to move the active species in the reaction space to the exposed surface of the substrate (0520). For example, active species positively charged in the reaction space may be accelerated and moved toward the substrate by sheath potential. However, as described above, the speed and/or the acceleration of the active species may be adjusted by changing parameters of RF power, and the like such that the active species may not damage the pattern structure on the substrate.

The moved active species above may contribute to the thin film deposition on the patterned structure (0530). As a result, a thin film including active species component may be formed on the exposed surface of the reaction space.

In some embodiments, the exposed surface of the substrate may include an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and the active species may move toward at least the side surface. Movement of the active species toward the side surface and toward the lower surface may improve the conformality of the thin film deposited on the pattern structure having recesses and trenches. In the case of the thin film having the improved conformality, even though isotropic etching is performed after being deposited on the pattern structure, the remaining film may be constant in thickness.

In some other embodiments, an operation of increasing the number of active species in the reaction space may be performed such that the thin film including an active species component may be formed. The larger the number of active species in the reaction space, the smaller the average travel distance that the active species may travel and the lower the average speed of active species. The active species with the reduced speed may contribute to the thin film formation rather than damage (sputtering) to the pattern structure.

In another alternative embodiment, an operation of reducing the mobility of the active species in the reaction space may be performed such that the thin film including the active species component may be formed. For example, when a frequency of the RF power increases, a direction change of the active species increases according to the increasing frequency, resulting in a decrease in the mobility of the active species. The active species with the reduced mobility may contribute to the thin film formation rather than the damage (sputtering) to the pattern structure.

In another alternative embodiment, an operation of reducing the magnitude of a bias may be performed such that the thin film including the active species component may be formed. When RF power is supplied, the bias (i.e., a plasma self-bias) toward the substrate may be generated, which causes the active species to move at a predetermined speed toward the substrate and/or to accelerate at a predetermined acceleration. In this case, the magnitude of the bias may affect the movement and/or acceleration, and the moving energy and/or acceleration energy of the active species may be reduced by reducing the magnitude of the bias. By adjusting the magnitude of the bias, the speed of the active species may contribute to the deposition of the active species on the substrate.

In some embodiments, an operation of increasing the magnitude of the RF power may be performed to increase the density of the deposited thin film. The magnitude of the increased RF power may result in the generation of more active species. That is, more active species may be accelerated toward the substrate, and thus a denser and harder film may be formed.

In some other embodiments, the thin film deposition method may be performed by using an atomic layer deposition method and a cyclic chemical vapor deposition method. For example, while the thin film deposition method is performed, a first operation of supplying a first material and a second operation of supplying a second material different from the first material may be performed. The active species used in the present disclosure may be formed from the first material and/or the second material. When the active species is formed from the second material, the thin film may be formed by reaction of the first material and the active species. In some other embodiments, the thin film deposition method may include a purge operation performed at least between the first and second operations.

FIG. 6 is a schematic view for explaining a problem that occurs in an atomic layer deposition process according to the related art. In the left side of FIG. 6, a thin film 20 may be deposited on a patterned structure 10 by using a PEALD method. For example, when a binary compound is formed, a source gas and a reactive gas may be sequentially supplied at an interval of time, and at least one of the two gases may be activated by plasma to induce a chemical reaction between the gases and deposit a thin film on the pattern structure. Since the thin films are sequentially stacked layer-by-layer, a thin film having conformality may be uniformly deposited over the top, side, and bottom of a trench structure.

Thereafter, wet etching may proceed in a subsequent process. As shown in the right side of FIG. 6, it may be seen that the conformality of a residual film A on the top of the pattern structure and a residual film B on the side and bottom of a pattern structure trench is not constant(A≠B). This is one of the problems in the related due to the linearity of plasma ions and radicals. A film deposited on the top of the pattern perpendicular to a traveling direction of plasma ions may be dense due to the ion bombardment effect. However, in the case of the side and the bottom of the trench, the ion bombardment effect by radicals may be smaller than the top of the trench, and radicals may be difficult to reach the bottom of the trench, and thus may not be as dense as the top film. Therefore, upon wet etching, a wet etch rate (WER) of the film formed on the side and bottom of the trench may be higher than the film formed on the top of the trench.

It is an object of the thin film deposition method of the present disclosure to solve the above problems. That is, the present disclosure provides a method of maintaining conformality of the thin film formed on the pattern uniformly even after wet etching proceeds after deposition.

To this end, in the present disclosure, a substrate may be disposed below a gas supply unit, and at least one material may be supplied as a component for forming a thin film through the gas supply unit to form the thin film on the substrate. During an operation of forming the thin film, the gas supply unit may be grounded and RF power may be supplied through the component disposed below the substrate. At least one of an operation of increasing density of an active species in a reaction space, an operation of reducing mobility of the active species, and an operation of reducing magnitude of a bias formed by RF power may be performed such that plasma generated by the RF power may contribute to deposition. Accordingly, a thin film having improved conformality may be formed on a pattern structure. Further, by accelerating more radicals toward the substrate, the thin film that is denser and has the improved etching resistance may be deposited on a surface of the pattern structure.

FIG. 7 shows an etching resistance of a SiO₂ thin film deposited when RF power is supplied through a lower electrode using a plasma enhanced atomic layer deposition (PEALD) method (see “BTM (Bottom) Bias” of FIG. 7) according to embodiments of the present disclosure. This experiment was performed on a flat substrate. A Si precursor was Bisdiethylaminosilane (BDEAS) and Trisdimethylaminosilane (TDMAS). Oxygen plasma was used as a reactive gas. An RF power frequency was set at 60 MHz.

Referring to FIG. 7, it may be seen that a WER is about 86 to 87 when RF power of 800 W is supplied through a lower electrode, whereas, when the RF power of 800 watts is supplied through an upper electrode, the WER of the SiO₂ thin film is about 91.7, and the RF power through the lower electrode shows a lower WER than the RF power through the upper electrode. This is because more active species are accelerated toward a substrate by a lower bias to form a denser and harder film. Referring to FIG. 7, it may be seen that when RF power is supplied through the lower electrode (see “BTM Bias” of FIG. 7), the WER decreases as RF power increases. For example, by supplying RF power having a VHF frequency of 60 MHz or more but supplying RF power of at least 800 W, a denser thin film may be formed.

FIG. 8 schematically shows a thin film deposition method according to embodiments of the present disclosure. The thin film deposition method according to the embodiments may be a modification of a thin film deposition method according to the above-described embodiments. Hereinafter, redundant descriptions of the embodiments will be omitted.

Referring to FIG. 8, a pattern structure having an upper surface and a lower surface and a side surface connecting the upper surface and the lower surface may be first introduced into a reaction space. Subsequently, during a period from t0 to t1, a first material (e.g., a silicon precursor) may be supplied into the reaction space to cause the first material to be chemisorbed onto the pattern structure. During a period from t1 to t2, the residue of the first material may be purged. As shown in FIG. 8, a purge gas may flow throughout a process cycle. During a period from t2 to t3, a second material (e.g., oxygen gas) may be supplied into the reaction space. During the period from t2 to t3, RF power may be supplied through a component disposed below a substrate to form potentials on the upper surface and the lower surface and the side surface exposed to the reaction space. Active species of the second material may move toward at least the side surface by the potential, and the first material chemically adsorbed may react with the active species during the period from t2 to t3 to form a thin film on the substrate. During a period from t3 to t4, the residue of the second material (and the active species) may be purged. A series of operations performed during the periods from t0 to t4 may be defined as one cycle, and the cycle may be repeated a plurality of times.

Table 1 below shows experimental conditions for a SiO₂ thin film deposition using the embodiment of FIG. 8. As the experimental conditions of the example embodiment, TDMAS was used as a Si source and oxygen was used as a reactive gas as shown in Table 1 below.

Substrate temperature 550° C. Precursor TDMAS Reactant O2 Gas flow rate Source carrier Ar 1500~2500 sccm (sccm) Purge Ar 500~1500 sccm O2 500~1500 sccm Process time Source feeding (t0~t1) 0.1~0.5 second per cycle Source purge (t1~t2) 0.1~0.5 second RF ON (t2~t3) 0.1~1.0 second Purge (t3~t4) 0.1~0.5 second Plasma RF power (W) 500~1000 W condition RF frequency 60 MHz

Although TDMAS is used as the Si source in Table 1 above, the present disclosure is not limited thereto. For example, the Si source may include at least one of iodosilanes including TSA, (SiH₃)₃N; DSO, (SiH₃)₂; DSMA, (SiH₃)₂NMe; DSEA, (SiH₃)₂NEt; DSIPA, (SiH₃)₂N(iPr); DSTBA, (SiH₃)₂N(tBu); DEAS, SiH₃NEt₂; DIPAS, SiH₃N(iPr)₂; DTBAS, SiH₃N(tBu)₂; BDEAS, SiH₂(NEt₂)₂; BDMAS, SiH₂(NMe₂)₂; BTBAS, SiH₂(NHtBu)₂; BITS, SiH₂(NHSiMe₃)₂; TEOS, Si(OEt)₄; HCD, Si₂Cl6; DCS, SiH₂Cl₂; 3DMAS, SiH(N(Me)₂)₃; BEMAS, Si H₂[N(Et)(Me)]₂; AHEAD, Si₂ (NHEt)₆; TEAS, Si(NHEt)₄; Si₃H₈; and at least one of iodosilane, diiodosilane, and pentaiodosilane including Si—H, for example. Also, an oxygen including gas as the reactive gas may include at least one of O₃, N₂O and NO in addition to O₂. In another embodiment, silicon nitride may be deposited on the substrate by supplying at least one of reactive gases including nitrogen, such as N₂, NH₃, and NH₄ ⁺. In addition, various kinds of thin films may be formed.

In Table 1 and FIG. 8, the Si source gas and the oxygen reactive gas may be sequentially supplied at an interval of time. The oxygen reactive gas may be activated by RF power to react with the Si source to form a SiO₂ thin film on the substrate. RF power may be supplied to a lower electrode, that is, the RF electrode 320 embedded in a heater, as described above. Thus, plasma may be generated in the reaction space on the substrate through the component below the substrate. In particular, high frequency RF power of 60 MHz may be supplied according to the present disclosure, and thus more radicals may be supplied to a trench structure of a pattern structure. Thus, a film with improved subsequent etching characteristics (i.e., having a uniform and low WER during subsequent isotropic etching) may be deposited.

Table 2 below shows the change in etching characteristics of the film deposited on the pattern structure according to Table 1 and FIG. 8 above.

WER (Å/min) Bottom plasma ΔWER Position in trench Top plasma ignition ignition (%) Top 53.0 43.2 −18% Side top 70.3 55.8 −21% Side mid 81.5 67.0 −18% Side bottom 83.2 67.3 −19% Bottom 65.8 51.8 −21%

Table 2 compares the WER characteristics of the SiO₂ film in a trench structure according to an upper plasma application method according to the related art and a lower plasma application method according to the present disclosure. As may be seen from Table 2 above, it may be seen that the WER of each part of a trench in the lower plasma application method is reduced by about 20% compared to the upper plasma application method. That is, the density of a thin film deposited in the trench may be increased and the etching resistance may be improved. The experimental results may be interpreted that plasma is generated in the reaction space by supplying VHF RF power through the lower electrode according to the present disclosure, and thus more radicals may be accelerated to the substrate and a dense film having improved etching resistance may be deposited on an inner surface of the trench.

FIG. 9 schematically shows a thin film deposition method according to embodiments of the present disclosure. The thin film deposition method according to the embodiments may be a modification of a thin film deposition method according to the above-described embodiments. Hereinafter, redundant descriptions of the embodiments will be omitted.

Referring to FIG. 9, the RF electrode 320 may be embedded below an upper surface of the substrate support unit 130 on which a substrate is mounted and may be supplied with RF power from a RF plasma apply unit P through the second rod 420 that is an RF rod. The RF plasma apply unit P may include an RF signal generator and a matcher (a matching network) (see FIG. 2). The substrate support unit 130 may further include the heater 310 supplying heat to the substrate. The heater 310 may be a heating element having a high electric resistance and may receive current from a power supply unit 710 through the first rod 410 that is a power rod. One side of the heater 310 may be connected to a thermocouple 450. A temperature control unit 720 may compare an actual temperature of the heater 310, measured by the thermocouple 450, with a set temperature and control a current supply of the power supply unit 710.

As described above, the RF shield 430 may be mounted on the substrate support unit 130 or in a thin film deposition apparatus including the substrate support unit 130 according to the technical idea of the present disclosure and may be disposed around the RF rod 420. The RF shield 430 may prevent parasitic plasma from being generated below the substrate support unit 130 due to an RF current supplied through the RF rod 420. Also, the RF shield 430 may block the cross-talk effect in which the RF current affects the power rod 410 and the power supply unit 710 and the like around it. The RF shield 430 may include aluminum and may be installed to allow stable current supply and temperature control to the heater 310.

In an alternative embodiment, a first low-pass filter LPF1 disposed between the first rod 410 and the power supply unit 710 may be configured to pass a signal having a band below a frequency of RF power generated by a plasma generation unit. For example, when the frequency band of RF power is 60 MHz, the first low-pass filter LPF1 may be configured to pass only a signal having a band of less than 60 MHz. Crosstalk may cause RF power signals of a 60 MHz or higher band generated by the plasma generation unit to be delivered to a channel (for example, a connection line between the first rod 410 and the power supply unit 710) connected to the power supply unit 710. In this case, a signal component (i.e., the RF power signal) in the channel may be blocked by the first low-pass filter LPF1. Therefore, the power supply unit 710 may operate smoothly without being influenced by RF power.

Similarly, a second low-pass filter LPF2 electrically connected to the thermocouple 450 may be configured to block the signal of the frequency band of RF power generated by the plasma generation unit among signals delivered to the temperature control unit 720. Similarly, when the frequency band of RF power is 60 MHz, the second low-band filter LPF2 may be configured to block a signal having a band of 60 MHz or more. As a result, the temperature control unit 720 may receive an electrical signal without crosstalk caused by the RF electrode 320. That is, the temperature control unit 720 may receive a temperature information signal from which the RF power component is removed from the thermocouple 450 and control the power supply unit 710 based on the received temperature information signal. In an alternative embodiment, the first low-pass filter LPF1 and the second low-pass filter LPF2 may be integrated into a single filter.

In another embodiment, the substrate support unit 130 may further include a capacitive element 730 disposed between the second rod 420 and the plasma generation unit. The capacitive element 730 may include, for example, a capacitor. The capacitive element 730 may operate as a short circuit in an RF field, but operate as an open circuit in a DC field. Thus, by connecting the capacitive element 730 with the RF electrode 320, the formation of a bias on the RF electrode 320 (such as a bias toward the substrate support unit 130 formed by the plasma generation unit) may be promoted. Since the bias is a DC field as a DC voltage, the DC bias formed on the RF electrode 320 may be maintained by the capacitive element 730 operating as the open circuit.

FIGS. 10 through 13 show a substrate support unit according to embodiments of the present disclosure in more detail.

Referring to FIG. 10, an upper portion 1 of the substrate support unit and a lower portion 2 of the substrate support unit may be mechanically or integrally connected. An upper fixing unit 8 and a lower fixing unit 9 may be inserted into the upper and lower portions 1 and 2 of the substrate support unit. The upper fixing unit 8 may contact an upper portion of the RF shield 430 and the lower fixing unit 9 may contact a lower portion of the RF shield 430.

As shown in FIG. 11 and FIG. 12, a plurality of through holes may be formed in the upper fixing unit 8 and the lower fixing unit 9 formed, and through holes of the upper fixing unit 8 and through holes of the lower fixing unit 9 are disposed correspondingly to each other. An RF rod 420′, the RF shield 430 surrounding the RF rod 420′, and a power rod 410′ connected to the socket 13 may be arranged to penetrate the through holes of the upper and lower fixing units 8 and 9. The upper and lower fixing units 8 and 9 may fix and support positions of the RF rod 420′, the RF shield 430, and the power rod 410′.

In an alternative embodiment, a part of the lower fixing unit 9 may be formed to wholly surround a circumference of the RF shield 430. Another part of the lower fixing unit 9 may be formed to partially surround the circumference of the RF shield 430. That is, in the other part, a part not surrounded by the lower fixing unit 9 may be formed. In an alternative embodiment, the part not surrounded may not be filled with a separate insulating material, and as a result an air gap A (not shown) may be formed in the part. In another alternative embodiment, the part in which the air gap A is formed may be filled with a material having a low dielectric constant.

A position of a lower end of the RF rod 420′ may be fixed by the second insulating member 10 and a ground bracket 11 contacting the second insulating member 10. The ground bracket 11 may include a first portion extending in the same direction as an extension direction of a second rod that is the RF rod 420′ and a second portion extending in a direction different from the extension direction of the second rod. In this case, the first portion may be connected to the RF shield 430 while the second portion may be connected to the ground G. The ground bracket 11 may have an L shape by the first portion and the second portion. According to an assembly structure of the second insulating member 10 and the ground bracket 11, a difference between an inner diameter of the RF shield 430 and a diameter of the second rod 420 may also be the same as a sum of a thickness of the first portion of the ground bracket 11 and a thickness of the second insulating member 10.

A socket 12 may be inserted into the lower end of the RF rod 420′ of which position is fixed and supported. The socket 12 may be connected to an RF cable 15 through an RF cable connection port 14 formed on one surface of the RF cable connector 4 to supply RF current to the RF rod 420′ (refer to FIG. 13). The lower portion 2 of the substrate support unit may be supported by a lower support body 3 of the substrate support unit 130. The lower support body 3 of the substrate support unit 130 may be inserted into an upper portion of the RF cable connector 4. Thus, positions of the upper and lower portions 1 and 2 of the substrate support unit 130 and the RF rod 420′, the RF shield 430, and the power rod 410′ may be fixed and supported.

The upper and lower fixing units 8 and 9 may include an insulating material, preferably a ceramic material, to prevent current leakage. The RF shield 430 may include a metal material, preferably an aluminum material, to prevent the crosstalk effect of the RF current flowing through the RF rod 420′ to an adjacent power supply connected to the power rod 410′. In addition, the RF shield 430 is configured to surround the RF rod 420′ inside a heater.

Although not shown in FIG. 10, a thermocouple (not shown) may also extend through the through holes provided in the upper and lower fixing units 8 and 9 like the RF rod 420′ and the power rod 410′. The thermocouple may be connected between the heater 310 and the temperature control unit 720, may compare an actual heating temperature of the heater 310 and a set temperature, and accordingly control a power supply of a power supplier.

It is to be understood that the shape of each portion in the accompanying drawings is illustrative for a clear understanding of the present disclosure. It should be noted that each portion may be modified into various shapes other than the illustrated shape.

It will be apparent to those of ordinary skill in the art that the present disclosure is not limited to the above embodiments and the accompanying drawings and various substitutions, modifications, and alterations may be made therein without departing from the spirit and scope of the present disclosure.

It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments.

While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims. 

What is claimed is:
 1. A thin film deposition method with respect to a substrate, the thin film deposition method comprising: forming a potential on an exposed surface of a trench structure of the substrate exposed to a reaction space by supplying RF power through a component disposed below the substrate; moving positively charged active species in the reaction space to the exposed surface of the trench structure by using the potential; forming a thin film comprising components of the positively charged active species on the exposed surface of the trench structure by a movement of the positively charged active species; and performing isotropic etching on the thin film such that a remaining film after the isotropic etching is constant in thickness, wherein, during the movement of the positively charged active species, a mobility of the positively charged active species in the reaction space is reduced, wherein the reduced mobility of the positively charged active species facilitates supply of the positively charged active species to the trench structure, and wherein a uniform WER (wet etch rate) of the thin film during the isotropic etching is achieved because of the supply of the positively charged active species to the trench structure.
 2. The thin film deposition method of claim 1, wherein the exposed surface of the substrate comprises an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and wherein the positively charged active species move at least toward the side surface of the exposed surface of the substrate.
 3. The thin film deposition method of claim 1, further comprising increasing a density of the thin film by increasing a magnitude of the RF power.
 4. The thin film deposition method of claim 1, wherein the component is a heater, and an RF electrode is inserted into the heater.
 5. The thin film deposition method of claim 1, during the forming the potential, wherein the substrate is disposed on a substrate support unit, wherein a first part of the substrate in contact with the substrate support unit is positively charged, and wherein a second part of the substrate opposite to the first part is negatively charged.
 6. The thin film deposition method of claim 5, wherein an attractive force is generated between the second part of the substrate and the positively charged active species.
 7. The method according to claim 1, wherein the positively charged active species are generated from a material provided through a gas supply unit disposed on the substrate, and wherein the gas supply unit is grounded while the RF power is supplied through the component disposed below the substrate.
 8. The thin film deposition method of claim 7, wherein, by supplying the RF power, a first plasma self-bias voltage is generated on the substrate and a second plasma self-bias voltage is generated on the gas supply unit at the same time, and wherein the first self-bias voltage is greater than the second self-bias voltage.
 9. The thin film deposition method of claim 8, wherein the exposed surface of the substrate is negatively charged by the first plasma self-bias voltage.
 10. The thin film deposition method of claim 1, wherein a bias toward the substrate is generated by supplying the RF power, and wherein the positively charged active species move toward the substrate at a predetermined speed by the bias.
 11. The thin film deposition method of claim 10, further comprising reducing a magnitude of the bias.
 12. The thin film deposition method of claim 10, wherein, by adjusting the magnitude of the bias, the speed of the positively charged active species contributes to a deposition on the substrate.
 13. The thin film deposition method of claim 1, further comprising: a first operation of supplying a first material; and a second operation of supplying a second material different from the first material, wherein the positively charged active species is formed from the second material, and wherein the thin film is formed by a reaction of the first material with the positively charged active species.
 14. The thin film deposition method of claim 13, further comprising performing a purging operation at least between the first operation and the second operation.
 15. The thin film deposition method of claim 1, further comprising increasing a density of the active species in the reaction space.
 16. A thin film deposition method with respect to a substrate, the thin film deposition method comprising: providing a pattern structure having an upper surface and a lower surface and a side surface connecting the upper surface and the lower surface; chemisorbing a first material including silicon on the pattern structure by supplying the first material into a reaction space; purging the first material; supplying a second material including nitride into the reaction space; forming a potential on the top surface, the bottom surface, and the side exposed to the reaction space by supplying RF power through a component disposed below the substrate; moving positively charged nitride active species of the second material toward at least the side surface, wherein a silicon nitride film is formed on a substrate by reacting the first material and the positively charged active species, performing isotropic etching on the silicon nitride film such that a remaining silicon nitride film after the isotropic etching is constant in thickness, wherein, during the forming the potential, the substrate is disposed on a substrate support unit, a first part of the substrate in contact with the substrate support unit is positively charged, and a second part of the substrate opposite to the first part is negatively charged, wherein, during the movement of the positively charged nitride active species, a mobility of the positively charged nitride active species in the reaction space is reduced, and wherein the reduced mobility of the positively charged nitride active species facilitates supply of the positively charged nitride active species to the pattern structure, and wherein a uniform WER (wet etch rate) during the isotropic etching is achieved because of the supply of the positively charged nitride active species to the pattern structure.
 17. A thin film deposition method with respect to a substrate, the thin film deposition method comprising: disposing a substrate on a component below a gas supply unit; forming a thin film on a trench structure of the substrate by supplying at least one material through the gas supply unit; and performing isotropic etching on the thin film such that a remaining film after the isotropic etching is constant in thickness, wherein, when forming the thin film, the gas supply unit is grounded and RF power is supplied through the component disposed below the substrate, wherein, during the supplying at least one material, mobility of the positively charged active species on the substrate is reduced, wherein the reduced mobility of the positively charged active species facilitates supply of the positively charged active species to the trench structure, and wherein a uniform WER (wet etch rate) of the thin film during the isotropic etching is achieved because of the supply of the positively charged active species to the trench structure.
 18. The thin film deposition method of claim 17, further comprising: when the supplying at least one material, reducing a magnitude of a bias formed by RF power. 